IR2109S

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Supplier Device Package: 8-SOICN
Configuration: Half Bridge
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Current - Peak: 200mA
Delay Time: 750ns


Features:

• Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with IN input
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time, and programmable
   up to 5us with one external RDT resistor (IR21094)
• Lower di/dt gate driver for better noise immunity
• Shut down input turns off both channels.


Pinout

Specifications

Symbol	Definition		Min.	Max.	Units
VB	High side floating supply voltage		-0.3	625	V
VS	High side floating supply offset voltage		VB - 25	VB + 0.3
VHO	High side floating output voltage		VS - 0.3	VB + 0.3
VCC	Low side and logic fixed supply voltage		-0.3	25
VLO	Low side output voltage		-0.3	VCC + 0.3
DT	Programmable dead-time pin voltage (IR21094 only)		VSS - 0.3	VCC + 0.3
VIN	Logic input voltage(IN & SD)		VSS - 0.3	VCC + 0.3
VSS	Logic ground (IR21094/IR21894 only)		VCC - 25	VCC + 0.3
dVS/dt	Allowable offset supply voltage transient		-	50	V/ns
PD	Package power dissipation @ TA +25	(8 lead PDIP)	-	1.0	W
		(8 lead SOIC)	-	0.625
		(14 lead PDIP)	-	1.6
		(14 lead SOIC)	-	1.0
RthJA	Thermal resistance, junction to ambient	(8 lead PDIP)	-	125	/W
		(8 lead SOIC)	-	200
		(14 lead PDIP)	-	75
		(14 lead SOIC)	-	120
TJ	Junction temperature		-	150
TS	Storage temperature		-55	150
TL	Lead temperature (soldering, 10 seconds)		-	300

Description

The IR2109S are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input of the IR2109S is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Parameters:

Technical/Catalog Information	IR2109S
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	10 V ~ 20 V
Current - Peak	200mA
Delay Time	750ns
Package / Case	8-SOIC (3.9mm Width)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2109S IR2109S