IR21091(S)

Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V, 5V and 15V input logic compatible• Cross...

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IR21091(S) Picture
SeekIC No. : 004376065 Detail

IR21091(S): Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V•...

floor Price/Ceiling Price

Part Number:
IR21091(S)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with IN input
• Logic and power ground +/- 5V offset.
• Internal 500ns dead-time, and programmable up to 5us with one external RDT resistor
• Lower di/dt gate driver for better noise immunity
• The dual function DT/SD pin input turns off both channels.



Pinout

  Connection Diagram


Specifications

Symbol
Definition
Min.
Max.
Units
VB
High side floating supply voltage
-0.3
625
V
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
DT/SD Programmable dead-time and shut-down pin voltage VSS -0.3 VCC +0.3
VIN
Logic input voltage
VSS - 0.3
VCC + 0.3
dVs/dt
Allowable offset supply voltage transient
-
50
V/ns
PD

Package power dissipation @ TA +25°C              (8 lead PDIP)

-
1.0
W

(8 lead SOIC)

-
0.625
RTHJA
Thermal resistance, junction to ambient         (8 lead PDIP)
-
125
°C/W

(8 lead SOIC)

-
200
TJ
Junction temperature
-
150
°C
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300



Description

The IR21091(S) are high voltage, high speed power MOSFET and IGBT drivers with dependant high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input of the IR21091(S) is compatible with standard CMOS or LSTTL output, down to 3.3V logic.  The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.




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