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IR2108(4)(S)

Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout for both channels• 3.3V, 5V and 15V input logic compatible• Cross...

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SeekIC No. : 004376064 Detail

IR2108(4)(S): Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V•...

IR2108(4)(S) Data Sheet

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Part Number:
IR2108(4)(S)
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with HIN input
• Low side output out of phase with LIN input
• Logic and power ground +/- 5V offset.
• Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21084)
• Lower di/dt gate driver for better noise immunity


Pinout

Connection Diagram


Specifications

Symbol
 Definition
Min.
Max.
Units
VB
 High side floating supply voltage
-0.3
625
V
VS
 High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
 High side floating output voltage
VS - 0.3
VB + 0.3
VCC
 Low side fixed supply voltage
-0.3
25
VLO
 Low side output voltage
-0.3
VCC + 0.3
VIN
 Logic input voltage(HIN & LIN)
-0.3
VCC + 0.3

VSS

 Logic ground (IR21064 only) VCC - 25 VCC + 0.3
dVs/dt
 Allowable offset supply voltage transient
-
50
V/ns
PD

Package power dissipation @ TA +25°C               (8 lead PDIP)
-
1.0
W

(8 lead SOIC)

-
0.625

(14 lead PDIP)
-
1.6

(14 lead SOIC)
-
1.0
RTHJA
Thermal resistance, junction to ambient          (8 lead PDIP)
-
125
°C/W

(8 lead SOIC)

-
200

(14 lead PDIP)
-
75

(14 lead SOIC)
-
120
TJ
 Junction temperature
-
150
°C
TS
 Storage temperature
-55
150
TL
 Lead temperature (soldering, 10 seconds)
-
300



Description

The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input of tthe IR2108(4)(S) is compatible with standard CMOS or LSTTL output, down to 3.3V logic.  The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.




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