IR2108S

IC DRIVER HALF BRIDGE 8SOIC

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SeekIC No. : 003565223 Detail

IR2108S: IC DRIVER HALF BRIDGE 8SOIC

floor Price/Ceiling Price

Part Number:
IR2108S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
Configuration: Half Bridge Type: -
Input Type: Inverting and Non-Inverting Delay Time: 220ns
Package / Case : TSSOP-14 Current - Peak: 200mA
On-State Resistance: - Current - Output / Channel: -
Number of Configurations: 1 Current - Peak Output: -
Number of Outputs: 2 High Side Voltage - Max (Bootstrap): 600V
Voltage - Supply: 10 V ~ 20 V Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN    

Description

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Inverting and Non-Inverting
Supplier Device Package: 8-SOICN
Configuration: Half Bridge
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Current - Peak: 200mA
Delay Time: 220ns


Features:

·Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout for both channels
·3.3V, 5V and 15V input logic compatible
·Cross-conduction prevention logic
·Matched propagation delay for both channels
·High side output in phase with HIN input
·Low side output out of phase withLIN input
·Logic and power ground +/- 5V offset.
·Internal 540ns dead-time, and
programmable up to 5us with one
resistor (IR21084)
external RDT
·Lower di/dt gate driver for better
noise immunity
·Available in Lead-Free





Specifications

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition
Min.
Max.
Units
VB High side floating absolute voltage
-0.3
625
V
VS High side floating supply offset voltage
VB - 25
VB + 0.3
VHO High side floating output voltage
VS - 0.3
VB + 0.3
VCC Low side and logic fixed supply voltage
-0.3
25
VLO Low side output voltage
-0.3
VCC + 0.3
DT Programmable dead-time pin voltage (IR21084 only)
V SS- 0.3
VCC+ 0.3
VIN Logic input voltage (HIN & LIN)
VSS - 0.3
VCC + 0.3
VSS Logic ground (IR21084 only)
VCC - 25

VCC + 0.3
dVS /dt
Allowable offset supply voltage transient
-
50
V/ns
PD Package power dissipation @ TA +25C (8 lead PDIP)
-
1.0
W
(8 lead SOIC)
-
0.625
(14 lead PDIP)
-
1.6
(14 lead SOIC)
-
1.0
RthJA Thermal resistance, junction to ambient (8 lead PDIP)
-
125
/W
(8 lead SOIC)
-
200
(14 lead PDIP)
-
75
(14 lead SOIC)
-
120
TJ Junction temperature
-
150
TS Storage temperature
-50
150
TL Lead temperature (soldering, 10 seconds)
-
300


Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition
Min.
Max.
Units
VB High side floating absolute voltage
-0.3
625
V
VS High side floating supply offset voltage
VB - 25
VB + 0.3
VHO High side floating output voltage
VS - 0.3
VB + 0.3
VCC Low side and logic fixed supply voltage
-0.3
25
VLO Low side output voltage
-0.3
VCC + 0.3
DT Programmable dead-time pin voltage (IR21084 only)
V SS- 0.3
VCC+ 0.3
VIN Logic input voltage (HIN & LIN)
VSS - 0.3
VCC + 0.3
VSS Logic ground (IR21084 only)
VCC - 25

VCC + 0.3
dVS /dt
Allowable offset supply voltage transient
-
50
V/ns
PD Package power dissipation @ TA +25C (8 lead PDIP)
-
1.0
W
(8 lead SOIC)
-
0.625
(14 lead PDIP)
-
1.6
(14 lead SOIC)
-
1.0
RthJA Thermal resistance, junction to ambient (8 lead PDIP)
-
125
/W
(8 lead SOIC)
-
200
(14 lead PDIP)
-
75
(14 lead SOIC)
-
120
TJ Junction temperature
-
150
TS Storage temperature
-50
150
TL Lead temperature (soldering, 10 seconds)
-
300







Description

The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side nced output channels. Proprietary HVIC and latch immuneCMOS technologies enable ruggedized monolithic construction. The logic input of the IR2108S is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high lse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-nnel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.








Parameters:

Technical/Catalog InformationIR2108S
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
ConfigurationHalf Bridge
Voltage - Supply10 V ~ 20 V
Current - Peak200mA
Delay Time220ns
Package / Case8-SOIC (3.9mm Width)
PackagingTube
Number of Outputs2
Input TypeInverting and Non-Inverting
Number of Configurations1
Operating Temperature-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)600V
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IR2108S
IR2108S



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