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IR2104(S)

Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout• 3.3V, 5V and 15V input logic compatible• Cross-conduction preven...

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IR2104(S): Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V•...

IR2104(S) Data Sheet

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Part Number:
IR2104(S)
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/10

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Internally set deadtime
• High side output in phase with input
• Shut down input turns off both channels
• Matched propagation delay for both channels


Specifications

Symbol
 Definition
Min.
Max.
Units
VB
 High side floating supply voltage
-0.3
625
V
VS
 High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
 High side floating output voltage
VS - 0.3
VB + 0.3
VCC
 Low side fixed supply voltage
-0.3
25
VLO
 Low side output voltage
-0.3
VCC + 0.3
VIN
 Logic input voltage(IN & SD)
-0.3
VCC + 0.3
dVs/dt
 Allowable offset supply voltage transient
-
50
V/ns
PD

Package power dissipation @ TA +25°C                (8 lead PDIP)
-
1.0
W

(8 lead SOIC)

-
0.625
RTHJA
Thermal resistance, junction to ambient        (8 lead PDIP)
-
125
°C/W

(8 lead SOIC)

-
200
TJ
 Junction temperature
-
150
°C
TS
 Storage temperature
-55
150
TL
 Lead temperature (soldering, 10 seconds)
-
300



Description

The  IR2104(s) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input is com-patible with standard CMOS or LSTTL output, down to 3.3V logic.  The output drivers feature a high pulse cur-rent  buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N- channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.




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