IR2104(S)

Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout• 3.3V, 5V and 15V input logic compatible• Cross-conduction preven...

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SeekIC No. : 004376056 Detail

IR2104(S): Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V•...

floor Price/Ceiling Price

Part Number:
IR2104(S)
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Internally set deadtime
• High side output in phase with input
• Shut down input turns off both channels
• Matched propagation delay for both channels



Specifications

Symbol
Definition
Min.
Max.
Units
VB
High side floating supply voltage
-0.3
625
V
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
VCC + 0.3
VIN
Logic input voltage(IN & SD)
-0.3
VCC + 0.3
dVs/dt
Allowable offset supply voltage transient
-
50
V/ns
PD

Package power dissipation @ TA +25°C                (8 lead PDIP)

-
1.0
W

(8 lead SOIC)

-
0.625
RTHJA
Thermal resistance, junction to ambient        (8 lead PDIP)
-
125
°C/W

(8 lead SOIC)

-
200
TJ
Junction temperature
-
150
°C
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
-
300



Description

The  IR2104(s) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input is com-patible with standard CMOS or LSTTL output, down to 3.3V logic.  The output drivers feature a high pulse cur-rent  buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N- channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.




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