IR2102S

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Type: Inverting
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOICN
Delay Time: 160ns
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Current - Peak: 210mA
Configuration: High and Low Side, Independent


Features:

• Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V, and 15V logic input compatible
• Matched propagation delay for both channels
• Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)


Pinout

Specifications

Symbol	Definition		Min.	Max.	Units
VB	High side floating supply voltage		-0.3	625	V
VS	High side floating supply offset voltage		VB - 25	VB + 0.3
VHO	High side floating output voltage		VS - 0.3	VB + 0.3
VCC	Low side and logic fixed supply voltage		-0.3	25
VLO	Low side output voltage		-0.3	VCC + 0.3
VIN	Logic input voltage (HIN & LIN )		- 0.3	VCC + 0.3
dVS/dt	Allowable offset supply voltage transient		-	50	V/ns
PD	Package power dissipation @ TA +25	(8 Lead PDIP)	-	1.0	W
		(8 Lead SOIC)	-	0.625
RthJA	Thermal resistance, junction to ambient	(8 Lead PDIP)	-	125	/W
		(8 Lead SOIC)	-	200
TJ	Junction temperature		-	150
TS	Storage temperature		-55	150
TL	Lead temperature (soldering, 10 seconds)		-	300

Description

The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Parameters:

Technical/Catalog Information	IR2102S
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	10 V ~ 20 V
Current - Peak	210mA
Delay Time	160ns
Package / Case	8-SOIC (3.9mm Width)
Packaging	Tube
Number of Outputs	2
Input Type	Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2102S IR2102S