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IR21024

Features: · Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune· Gate drive supply range from 10 to 20V· Undervoltage lockout· 5V Schmitt-triggered input logic· Matched propagation delay for both channels· Outputs in phas...

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SeekIC No. : 004376055 Detail

IR21024: Features: · Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune· Gate drive supply range from 10 to 20V· Undervoltage loc...

IR21024 Data Sheet

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Part Number:
IR21024
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
· Gate drive supply range from 10 to 20V
· Undervoltage lockout
· 5V Schmitt-triggered input logic
· Matched propagation delay for both channels
· Outputs in phase with inputs (IR2101/IR21014) or out of phase with inputs (IR2102/IR21024)


Pinout

Connection Diagram




Specifications

Symbol Definition Min. Max.
 Units
VB High side floating supply voltage -0.3 625 V
VS High side floating supply offset voltage VB - 25
 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25
VLO Low side output voltage -0.3 VCC + 0.3
VIN Logic input voltage (HIN & LIN) -0.3 VCC + 0.3
dVS/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA +25 (8 lead PDIP) - 1.0 W
(8 lead SOIC) - 0.625
(14 lead PDIP) - 1.6
(14 lead SOIC) - 1.0
RthJA Thermal resistance, junction to ambient (8 lead PDIP) - 125 /W
(8 lead SOIC) - 200
(14 lead PDIP) - 75
(14 lead SOIC) - 120
TJ Junction temperature - 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300



Description

The IR2101/IR21014/IR2102/IR21024 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.




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