IR185BG08DCB

The IR185BG08DCB has some major ratings and characteristics.When parameier is VTM maximum on-state voltage,the rating is 1.25,the units is V,the test conditions is TJ=25,IT=16A.When parameier is VRRM reverse breakdown voltage,the rating is 800,the units is V,the test conditions is TJ=25,IRRM=100A.When parameier is IGT Max. required DC gate currentto trigger,the rating is 60,the units is mA,the test conditions is TJ=25,anode supply=6V,resistive load.When parameier is IGT Max. required DC gate currentto trigger,the rating is 2,the units is V,the test conditions is TJ=25,anode supply=6V,resistive load.When parameier of the IR185BG08DCB is IH holding current range,the rating is 5 to 100,the units is mA,the test conditions is anode supply=6V,resistive load.When parameier is IL maximum latching current,the rating is 200,the units is mA,the test conditions is anode supply=6V,resistive load.

The IR185BG08DCB has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 100% Al,(20 m).The chip dimensions is 185 x 185 mils .The wafer diameter is 100mm,with std.< 110 > flat.The wafer thickness is 350m±10m.The maximum width of sawing line is 130m.The reject ink dot size is 0.25 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.