IR1176

Series: -
Configuration: Low-Side
Type: -
On-State Resistance: -
Current - Output / Channel: -
Number of Configurations: 2
Current - Peak Output: -
Number of Outputs: 2
High Side Voltage - Max (Bootstrap): -
Mounting Type: Through Hole
Packaging: Tube
Input Type: Non-Inverting
Operating Temperature: -40°C ~ 85°C
Current - Peak: 4A
Delay Time: -
Package / Case: 20-DIP (0.300", 7.62mm)
Manufacturer: International Rectifier
Supplier Device Package: 20-DIP
Voltage - Supply: 4 V ~ 5.25 V


Features:

• Provides constant and proper gate drive to power MOSFETs regardless of transformer output
• Minimizes loss due to power MOSFET body drain diode conduction
• Stand alone operation - no ties to primary side
• Schmitt trigger input with double pulse suppression allows operation in noisy environments
• High peak current drive capability - 4A
• High speed operation - 2MHz
• Adaptable to multiple topologies

Pinout




Specifications

Symbol	Definition		Min.	Max.	Units
Vdd	Supply voltage		-	7	VDC
Iin	Input clamp current		-	+/- 10	mADC
PD	Power dissipation	(SSOP-20)	-	400	mW
		(SOIC)	-	-	-
		(PDIP)	-	-	-
RthJC	Thermal resistance	(SSOP-20) junction-to-case	-	28.5	/W
		(SOIC) junction-to-case		20
		(PDIP) junction-to-case		28.1
RthJA	Thermal resistance (SSOP-20) junction-to-ambient		-	90.5
	(SOIC) junction-to-ambient			45
	(PDIP) junction-to-ambient			62.4
TJ	Junction temperature		-	150
TS	Storage temperature		-55	150
TL	Lead temperature (soldering, 10 seconds)		-	300

Description

The IR1176 is a high speed CMOS controller designed to drive N-channel power MOSFETs used as synchronous rectifiers in high current, high frequency forward converters with output voltages equal or below 5VDC. Schmitt trigger inputs with double pulse suppression allow the controller to operate in noisy environments. The circuit does not require any ties to the primary side and derives its operating power directly from the secondary. The circuit functions of the IR1176 by anticipating transformer output transitions, then turns the power MOSFETs on or off before the transitions of the transformer to minimize body drain diode conduction and reduce associated losses. Turn on/off lead time can be adjusted to accommodate a variety of power MOSFET sizes and circuit conditions. The IR1176 also provides gate drive overlap/dead-time control via external components to further minimize diode conduction by nulling effects of secondary loop and device package inductance.

Parameters:

Technical/Catalog Information	IR1176
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	Low-Side
Voltage - Supply	4 V ~ 5.25 V
Current - Peak	4A
Delay Time	-
Package / Case	20-DIP
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	2
Operating Temperature	-40°C ~ 85°C
High Side Voltage - Max (Bootstrap)	-
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR1176 IR1176