IC MOSFET DRIVER N-CHAN 8-SOIC
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Features: Junction Size: Square 110 milsWafer Size:4 VRRM Class: 1200 VPassivation Process: Glassi...
Series: | SmartRectifier™ | Manufacturer: | International Rectifier |
Configuration: | Low-Side | Type: | - |
Input Type: | Self Oscillating | Operating Supply Voltage : | 3 V |
Delay Time: | 60ns | Current - Peak: | 2A |
On-State Resistance: | - | Current - Output / Channel: | - |
Number of Configurations: | 1 | Current - Peak Output: | - |
Number of Outputs: | 1 | High Side Voltage - Max (Bootstrap): | - |
Voltage - Supply: | 12 V ~ 18 V | Operating Temperature: | -25°C ~ 125°C |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOICN |
The IR1167ASPbF is designed as one kind of smart secondary side driver IC designed to drive N-channel power MOSFETs used as synchronous rectifiers in isolated flyback converters.The IC can control one or more paralleled N-MOSFETs to emulate the behavior of schottky diode rectifiers.The drain to source voltage is sensed differentially to determine the polatity of the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in continuous,discontinuous and critical current mode operation and both fixed and variable frequency modes.
Features of the IR1167ASPbF are:(1)secondary side high speed SR controller;(2)DCM,CrCM and CCM flyback topologies;(3)200V proprietary IC technology;(4)max 500KHz switching frequency;(5)anti-bounce logic and UVLO protection;(6)7A peak turn off drive current;(7)micropower start-up & ultra low quiescent current;(8)10.7/14.5V gate drive clamp.
The absolute maximum ratings of the IR1167ASPbF can be summarized as:(1)supply voltage:-0.3 to 20 V;(2)nable voltage:-0.3 to 20 V;(3)cont. drain sense voltage:-3 to 200 V;(4)pulse drain sense voltage:-5 to 200 V;(5)source sense voltage:-3 to 20 V;(6)gate voltage:-0.3 to 20 V;(7)operating junction temperature :-40 to 150;(8)storage temperature:-55 to 150;(9)thermal resistance:128/W;(10)package power dissipation:970 mW;(11)ESD protection:2 kV;(12)switching frequency:500 kHz.If you want to know more information about this part,please download the datasheet in www.seekic.com and www.chinaicmart.com .
Technical/Catalog Information | IR1167ASPBF |
Vendor | International Rectifier |
Category | Integrated Circuits (ICs) |
Configuration | Low-Side |
Voltage - Supply | 12 V ~ 18 V |
Current - Peak | 2A |
Delay Time | 60ns |
Package / Case | 8-SOIC (3.9mm Width) |
Packaging | Tube |
Number of Outputs | 1 |
Input Type | Self Oscillating |
Number of Configurations | 1 |
Operating Temperature | -25°C ~ 125°C |
High Side Voltage - Max (Bootstrap) | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IR1167ASPBF IR1167ASPBF |