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IR082HD4C10U-P2

Features: • Output Power IGBT's in half-bridge configuration• 575V rated breakdown voltage• High side gate drive designed for bootstrap operation• Matched propagation delay for both channels• Independent high and low side output channels (IR062HD4C10U-P2) or cross-con...

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SeekIC No. : 004375997 Detail

IR082HD4C10U-P2: Features: • Output Power IGBT's in half-bridge configuration• 575V rated breakdown voltage• High side gate drive designed for bootstrap operation• Matched propagation delay f...

IR082HD4C10U-P2 Data Sheet

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Part Number:
IR082HD4C10U-P2
Supply Ability:
5000

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Output Power IGBT's in half-bridge configuration
• 575V rated breakdown voltage
• High side gate drive designed for bootstrap operation
• Matched propagation delay for both channels
• Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2)
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• Metal heatsink back for improved PD


Pinout

Connection Diagram


Specifications

Symbol Definition Min. Max. Units
VIN High voltage supply - 0.3 575 V
VB High side floating supply absolute voltage VO -0.3 VO+ 25
VO Half-bridge output voltage - 0.3 VIN+ 0.3
VIH/VIL Logic input voltage (HIN & LIN) - 0.3 Vcc + 0.3
VCC Low side and logic fixed supply voltage - 0.3 25
dV/dt Peak diode recovery dv/dt - 3.50 V/ns
PD Package power dissipation @ TA +25 - 3.00 W
RthJA Thermal resistance, junction to ambient - 50 /W
RthJc Thermal resistance, junction to case (metal) - 20
TJ Junction temperature -55 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.



Description

The IR082HD4C10U-P2 are high voltage, high speed half bridges. Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The frontend features an independent high and low side driver in phase with the logic compatible input signals. The output of the IR082HD4C10U-P2 features two IGBT's in a halfbridge configuration. Propagation delays for the high and low side power IGBT's are matched to simplify use. The device can operate up to 575 volts.




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