IPW90R1K0C3, US $ 1.18-1.78 , Infineon Technologies, IPW90R1K0C3 DataSheet download, circuit diagram from SeekIC.com

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IPW90R1K0C3: MOSFET COOL MOS

IPW90R1K0C3 Data Sheet

US $ 1.18~1.78 / Piece | Get Latest Price

Part Number:: IPW90R1K0C3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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0~1
1~10
10~100
100~250

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$1.78
$1.59
$1.3
$1.18

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15 Days
15 Days

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Upload time: 2024/11/22

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Recent History
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	900 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	5.7 A
Resistance Drain-Source RDS (on) :	1 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 5.7 A
Resistance Drain-Source RDS (on) : 1 Ohms

Parameters:

Technical/Catalog Information	IPW90R1K0C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	5.7A
Rds On (Max) @ Id, Vgs	1 Ohm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds	850pF @ 100V
Power - Max	89W
Packaging	Tube
Gate Charge (Qg) @ Vgs	34nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPW90R1K0C3 IPW90R1K0C3

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IPW90R1K0C3

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