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IPW60R299CP

MOSFET COOL MOS PWR TRANS 650V

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SeekIC No. : 00149332 Detail

IPW60R299CP: MOSFET COOL MOS PWR TRANS 650V

IPW60R299CP Data Sheet

floor Price/Ceiling Price

US $ 1.05~1.77 / Piece | Get Latest Price
Part Number:
IPW60R299CP
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.77
  • $1.58
  • $1.3
  • $1.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.299 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.299 Ohms
Continuous Drain Current : 11 A


Features:

• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25
11
A
TC=100
4
Pulsed drain current2)
ID,pulse
TC=251)
34
Avalanche energy, single pulse
EAS
ID=4.4A,VDD=50V
390
mJ
Avalanche energy, repetitive t AR
2),3)
EAR
ID=4.4A,VDD=50V
0.44
Avalanche current, repetitive t AR
2),3)
IAR
4.4
A
MOSFET dv /dt ruggedness
dv /dt
VDS=0...480 V
50
KV/s
Gate source voltage
VGS
static
±20
V
AC (f >1 Hz)
±30
Power dissipation
Ptot
TC=25
96
W
Operating and storage temperature
Tj, Tstg
-55 ... 150
Mounting torque
M3 and M3.5 screws
60




Parameters:

Technical/Catalog InformationIPW60R299CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs299 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 100V
Power - Max96W
PackagingTube
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPW60R299CP
IPW60R299CP



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