IPW60R250CP, US $ 1.13-1.2 , Infineon Technologies, IPW60R250CP DataSheet download, circuit diagram from SeekIC.com

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IPW60R250CP: MOSFET COOL MOS N-CH 600V 0.250Ohms

IPW60R250CP Data Sheet

US $ 1.13~1.2 / Piece | Get Latest Price

Part Number:: IPW60R250CP
Mfg:: Infineon Technologies
Supply Ability:: 5000

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100~250

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$1.13
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	12 A
Resistance Drain-Source RDS (on) :	0.25 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 12 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.25 Ohms

Parameters:

Technical/Catalog Information	IPW60R250CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	250 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 100V
Power - Max	104W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPW60R250CP IPW60R250CP

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IPW60R250CP

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