IPW50R250CP, US $ 1-1.06 , Infineon Technologies, IPW50R250CP DataSheet download, circuit diagram from SeekIC.com

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IPW50R250CP: MOSFET COOL MOS N-CH 500V 0.250Ohms

IPW50R250CP Data Sheet

US $ 1~1.06 / Piece | Get Latest Price

Part Number:: IPW50R250CP
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	13 A
Resistance Drain-Source RDS (on) :	0.25 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.25 Ohms
Continuous Drain Current : 13 A

Parameters:

Technical/Catalog Information	IPW50R250CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	250 mOhm @ 7.8A, 10V
Input Capacitance (Ciss) @ Vds	1420pF @ 100V
Power - Max	114W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPW50R250CP IPW50R250CP

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IPW50R250CP

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