Position: Home  > All Categories> Integrated Circuits (ICs) > IPU64CN10NG

IPU64CN10NG

Features: • N-channel, normal level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-fre...

product image

IPU64CN10NG Picture
See larger image
SeekIC No. : 004375967 Detail

IPU64CN10NG: Features: • N-channel, normal level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• 175 operating temperature• Pb-free lead plating; R...

IPU64CN10NG Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPU64CN10NG
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 17 A
TC=100 13
Pulsed drain currentt2) ID,pulse TC=25 68
Avalanche energy, single pulse EAS ID=17 A, RGS=25 34 mJ
Reverse diode dv /dt dv /dt ID=17 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 		6 kV/s
Gate source voltage3) VGS ±20 V
Power dissipation Ptot TC=25 44 W
Operating and storage temperature Tj, Tstg -55 ... 175
IEC climatic category; DIN IEC 68-1 55/175/56
1)J-STD20 and JESD22
2) see figure 3
3) T jmax=150 and duty cycle D =0.01 for V GS<-5V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Line Protection, Backups
BX0023
A20B-1008-0550
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Cable Assemblies
CS1W-CN114
XW2Z-500T
Transformers
TM-09210
BV222-1-00992
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
View more