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IPU64CN10NG

Features: • N-channel, normal level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-fre...

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IPU64CN10NG: Features: • N-channel, normal level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• 175 operating temperature• Pb-free lead plating; R...

IPU64CN10NG Data Sheet

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Part Number:
IPU64CN10NG
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 17 A
TC=100 13
Pulsed drain currentt2) ID,pulse TC=25 68
Avalanche energy, single pulse EAS ID=17 A, RGS=25 34 mJ
Reverse diode dv /dt dv /dt ID=17 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 		6 kV/s
Gate source voltage3) VGS ±20 V
Power dissipation Ptot TC=25 44 W
Operating and storage temperature Tj, Tstg -55 ... 175
IEC climatic category; DIN IEC 68-1 55/175/56
1)J-STD20 and JESD22
2) see figure 3
3) T jmax=150 and duty cycle D =0.01 for V GS<-5V


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