Position: Home  > All Categories> Integrated Circuits (ICs) > IPU49CN10N G

IPU49CN10N G

MOSFET N-CH 100V 20A

product image

IPU49CN10N G Picture
See larger image
SeekIC No. : 00162561 Detail

IPU49CN10N G: MOSFET N-CH 100V 20A

IPU49CN10N G Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPU49CN10N G
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 49 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 20 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 49 m Ohms


Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Value Conditions Unit
Continuous drain current ID 20 TC=25 °C A
14 TC=100 °C
Pulsed drain current2) I D,pulse 80 TC=25 °C
Avalanche energy, single pulse EAS 29 ID=20 A, RGS=25 mJ
Reverse diode dv /dt dv /dt 6 I D=20 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 °C		 kV/s
Gate source voltage3) VGS ±20   V
Power dissipation Ptot 44 TC=25 °C W
Operating and storage temperature Tj, Tstg -55 ... 175  
IEC climatic category; DIN IEC 68-1   55/175/56    
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Cable Assemblies
CS1W-CN114
XW2Z-500T
View more