IPU10N03LA

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 25V
Power - Max: 52W
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 11nC @ 5V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: P-TO251-3
Input Capacitance (Ciss) @ Vds: 1358pF @ 15V
Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature


Specifications




Parameters:

Technical/Catalog Information	IPU10N03LA
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	10.4 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1358pF @ 15V
Power - Max	52W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPU10N03LA IPU10N03LA