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IPSH6N03LB

Specifications Parameter Symbol Conditions Value Unit Continuous drain current I D T C=25 2) 50 A T C=100 50 Pulsed drain current I D,pulse T C=25 3) 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 160 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=...

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IPSH6N03LB: Specifications Parameter Symbol Conditions Value Unit Continuous drain current I D T C=25 2) 50 A T C=100 50 Pulsed drain current I D,pulse T C=25 3) 200 Avalanche ener...

IPSH6N03LB Data Sheet

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IPSH6N03LB
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Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 2) 50 A
T C=100 50
Pulsed drain current I D,pulse T C=25 3) 200
Avalanche energy, single pulse E AS I D=50 A, R GS=25 160 mJ
Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 		6 kV/s
Gate source voltage4) V GS   ±20 V
Power dissipation P tot T C=25 83 W
Operating and storage temperature T j, T stg   -55 ... 175
IEC climatic category; DIN IEC 68-1     55/175/56  

2) Current is limited by bondwire; with an RthJC=1.8 K/W the chip is able to carry 86 A.
3) See figure 3
4) T j,max=150 and duty cycle D<0.25 for V GS<-5 V


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