Position: Home  > All Categories> Integrated Circuits (ICs) > IPS13N03LAG

IPS13N03LAG

MOSFET N-KANAL POWER MOS

product image

IPS13N03LAG Picture
See larger image
SeekIC No. : 00159839 Detail

IPS13N03LAG: MOSFET N-KANAL POWER MOS

IPS13N03LAG Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IPS13N03LAG
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/12

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 21.9 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 30 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 21.9 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 2)
T C=100 		30
30		 A
Pulsed drain current I D,pulse T C=25 3) 210
Avalanche energy, single pulse E AS I D=30 A, R GS=25 80 mJ
Reverse diode dv /dt dv /dt D=30 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 		6 kV/s
Gate source voltage4) V GS ±20 V
Power dissipation P tot T C=25 52 W
Operating and storage temperature T j, T stg -55 ... 175
IEC climatic category; DIN IEC 68-1 55/175/56



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Memory Cards, Modules
WT32
VTL5C7
Tools
TCP202
G084SN05 V.3
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Transformers
TM-09210
BV222-1-00992
View more