Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel, logic level• Excellent gate charge x RDS(on) product (FOM)• Superior thermal resistance• 175 °C operating temperatureSpecifications Par...
IPS13N03LA: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel, logic level• Excellent gate charge x RDS(on) product...
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Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 2) | 30 | A |
TC=100 | 30 | |||
Pulsed drain current | ID,pulse | TC=25 3) | 210 | |
Avalanche energy, single pulse | EAS | ID=24 A, RGS=25 Ω | 60 | mJ |
Reverse diode dv /dt | dv /dt | ID=30 A, VDS=20 V, di /dt =200 A/µs, T j,max=175 |
6 | kV/µs |
Gate source voltage4) | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 °C | 46 | W |
Operating and storage temperature | Tj, Tstg | -55 ...175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |