Specifications Parameter Symbol Conditions Value Unit Continuous drain current ID TC=252) 30 A TC=100 30 Pulsed drain current ID,pulse TC=253) 120 Avalanche energy, single pulse EAS ID=9.3 A, RGS=25 64 mJ MOSFET dv /dt ruggedn...
IPS12N03LBG: Specifications Parameter Symbol Conditions Value Unit Continuous drain current ID TC=252) 30 A TC=100 30 Pulsed drain current ID,pulse TC=253) 12...
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Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
ID |
TC=252) |
30 |
A |
TC=100 |
30 | |||
Pulsed drain current |
ID,pulse |
TC=253) |
120 | |
Avalanche energy, single pulse |
EAS |
ID=9.3 A, RGS=25 |
64 |
mJ |
MOSFET dv /dt ruggedness |
dv /dt |
I D=30 A, V DS=20 V, di /dt =200 A/s, T j,max=175 |
6 |
kV/s |
Gate source voltage4) |
VGS |
static |
±20 |
V |
Power dissipation |
Ptot |
TC=25 |
192 |
W |
Operating and storage temperature |
Tj, Tstg |
-55 ... 150 |
||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |