IPS12N03LBG

Specifications Parameter Symbol Conditions Value Unit Continuous drain current ID TC=252) 30 A TC=100 30 Pulsed drain current ID,pulse TC=253) 120 Avalanche energy, single pulse EAS ID=9.3 A, RGS=25 64 mJ MOSFET dv /dt ruggedn...

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IPS12N03LBG: Specifications Parameter Symbol Conditions Value Unit Continuous drain current ID TC=252) 30 A TC=100 30 Pulsed drain current ID,pulse TC=253) 12...

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Part Number:
IPS12N03LBG
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=252)
30
A
TC=100
30
Pulsed drain current
ID,pulse
TC=253)
120
Avalanche energy, single pulse
EAS
ID=9.3 A, RGS=25
64
mJ
MOSFET dv /dt ruggedness
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175
6
kV/s
Gate source voltage4)
VGS
static
±20
V
Power dissipation
Ptot
TC=25
192
W
Operating and storage temperature
Tj, Tstg
-55 ... 150
IEC climatic category; DIN IEC 68-1
55/175/56  



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