Features: •Over temperature shutdown• Over current shutdown• Active clamp e• Low current & logic lev l input On/Off for EMI• ESD protection• Optimized Turn• Diagnostic on the input currentSpecifications Symbol Parameter Min. Max. Uni...
IPS1031R: Features: •Over temperature shutdown• Over current shutdown• Active clamp e• Low current & logic lev l input On/Off for EMI• ESD protection• Optimized Turn...
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Symbol |
Parameter |
Min. |
Max. |
Units |
Vds |
Maximum drain to source voltage |
-0.3 |
36 |
V |
Vds cont. |
Maximum continuous drain to source voltage |
- |
28 |
V |
Vin |
Maximum input voltage |
-0.3 |
6 |
V |
Isd cont. |
Max. diode continuous current (limited by thermal dissipation) |
- |
4 |
A |
Pd |
Maximum power dissipation (internally limited by thermal protection) Rth=5/W IPS1031 |
- |
25 |
W |
Rth=40/W IPS1031S 1" sqr. footprint |
- |
3.1 | ||
Rth=50C/W IPS1031R 1" sqr. footprint |
- |
25 |
||
ESD |
Electrostatic discharge voltage (Human body) C=100pF, R=1500 Between drain and source |
- |
4 |
kV |
Other combinations |
- |
3 | ||
Electrostatic discharge voltage (Machine Model) C=200pF,R=0 Between drain and source |
- |
0.5 | ||
Other combinations |
- |
0.3 | ||
Tj max. |
Max. storage & operating temperature junction temperature |
-40 |
150 |
|
Tsoldering |
Lead soldering temperature (10 seconds) |
- |
300 |
The IPS1031R is a three terminal Intelligent PowerSwitch (IPS) that features a low side MOSFET with over-current, over-temperature, ESD protection and drain to source active clamp. This device offers protections and the high reliability required in harsh environments. The switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 18A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability of the IPS1031R is significantly enhanced by the active clamp and covers most inductive load demagnetizations.