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IPS09N03LBG

Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel, logic level• Excellent gate charge x R DS(on) product (FOM)• Superior thermal resistance• 175 °C operating temperature• Pb-free lead p...

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IPS09N03LBG: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel, logic level• Excellent gate charge x R DS(on) produc...

IPS09N03LBG Data Sheet

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Part Number:
IPS09N03LBG
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Upload time: 2024/6/11

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Product Details

Description



Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 2) 50 A
T C=100 42 A
Pulsed drain current I D,pulse T C=25 3) 200 A
Avalanche energy, single pulse E AS I D=50 A, R GS=25 57 mJ
Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 		6 kV/s
Gate source voltage4) V GS   ±20 V
Power dissipation P tot T C=25 58 W
Operating and storage temperature T j, T stg   -55 ... 175
IEC climatic category; DIN IEC 68-1     55/175/56  



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