Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• Superior thermal resistance• 175 °C ope...
IPS06N03LB: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x R DS(on) produ...
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Parameter |
Symbol |
Conditions |
Unit |
Value |
Continuous drain current Pulsed drain current |
I D I D,pulse |
T C=25 °C2) T C=100 °C T C=25 °C3) |
50 50 200 |
A |
Avalanche energy, single pulse |
E AS |
I D=50 A, R GS=25 Ω |
210 |
mJ |
Reverse diode dv /dt |
dv /dt |
I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C |
6 |
kV/µs |
Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 |
V GS P tot T j, T stg |
T C=25 °C |
±20 94 -55 ... 175 55/175/56 |
V W °C |