Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target application• N-channel, logic level• Excellent gate charge x R DS(on) product (FOM)• Superior thermal resistance• 175 operating temperatureSpecifications Param...
IPS06N03LA: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target application• N-channel, logic level• Excellent gate charge x R DS(on) product...
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Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 2) | 50 | A |
TC=100 | 50 | |||
Pulsed drain current | ID,pulse | TC=25 3) | 350 | |
Avalanche energy, single pulse | EAS | ID=45 A, RGS=25 Ω | 225 | mJ |
Reverse diode dv /dt | dv /dt | ID=50 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 |
6 | kV/µs |
Gate source voltage4) | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 | 83 | W |
Operating and storage temperature | Tj, T stg | -55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |