IPS032G

IC MOSFET PWR SW DUAL 12A 16SOIC

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SeekIC No. : 003566393 Detail

IPS032G: IC MOSFET PWR SW DUAL 12A 16SOIC

floor Price/Ceiling Price

Part Number:
IPS032G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
Type: Low Side Input Type: Non-Inverting
Package / Case : SSOP-20 Number of Outputs: 2
On-State Resistance: 45 mOhm Current - Output / Channel: 1.65A
Current - Peak Output: 15A Voltage - Supply: 4 V ~ 6 V
Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC N    

Description

Series: -
Input Type: Non-Inverting
Mounting Type: Surface Mount
Number of Outputs: 2
Type: Low Side
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC N
Operating Temperature: -40°C ~ 150°C
Manufacturer: International Rectifier
Current - Output / Channel: 1.65A
Current - Peak Output: 15A
On-State Resistance: 45 mOhm
Voltage - Supply: 4 V ~ 6 V


Features:

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection



Pinout

  Connection Diagram




Specifications

Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47 V  
Vin Maximum input voltage -0.3 7  
Iin, max Maximum IN current -10 +10 mA  
Isd cont. Diode max. continuous current (1)
(rth=125/W) IPS031G
(for all sd mosfets, rth=85/W) IPS032G
-
-
1.4
2
   
Isd pulsed Diode max. pulsed current (1) (for ea. mosfet) - 15    
Pd Maximum power dissipation(1)
(rth=125/W) IPS031G
(for all Pd mosfets, rth=85/W) IPS032G
-
-
1
1.5
W  

ESD1

Electrostatic discharge voltage (Human Body) - 4 kV C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55 150  
Tj max. Max. junction temperature -40 150  

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. All Sources leads of each mosfet must be connected together to get full current capability


Description

The IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning off the power MOSFET when the temperature exceeds 165 or when the drain current reaches 12A. The IPS032G restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.




Parameters:

Technical/Catalog InformationIPS032G
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
Package / Case16-SOIC (3.9mm Width)
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply4 V ~ 6 V
On-State Resistance45 mOhm
Current - Output / Channel1.65A
Current - Peak Output15A
PackagingTube
Input TypeNon-Inverting
Number of Outputs2
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPS032G
IPS032G



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