IPS021

Power Driver ICs IPS 1 Ch Low Side Driver

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IPS021 Picture
SeekIC No. : 00537319 Detail

IPS021: Power Driver ICs IPS 1 Ch Low Side Driver

floor Price/Ceiling Price

US $ .89~2.02 / Piece | Get Latest Price
Part Number:
IPS021
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.02
  • $1.31
  • $.95
  • $.89
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Product : H-Bridge Drivers Type : Low Side
Rise Time : 0.9 us Fall Time : 1.3 us
Supply Voltage - Max : 6 V Supply Voltage - Min : 4 V
Supply Current : 10 mA Maximum Power Dissipation : 2 W
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Maximum Operating Temperature :
Supply Voltage - Min : 4 V
Packaging : Tube
Product : H-Bridge Drivers
Mounting Style : Through Hole
Type : Low Side
Supply Current : 10 mA
Maximum Power Dissipation : 2 W
Supply Voltage - Max : 6 V
Package / Case : TO-220AB
Rise Time : 0.9 us
Fall Time : 1.3 us


Features:

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection



Pinout

  Connection Diagram


Specifications

Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47 V  
Vin Maximum Input voltage -0.3
7  
Iin, max Maximum IN current -10 +10 mA  
Isd cont. Diode max. continuous current
rth=62/W IPS021
- 2.8 A  
rth=10/W IPS021 - 35  
rth=80/W IPS021S - 2.2  
Isd pulsed Diode max. pulsed current (1) - 45  
Pd Maximum power dissipation(1)
(rth=62/W) IPS0151
- 2 W  
(rth=80/W) IPS0151S - 1.56  
ESD1 Electrostatic discharge voltage (Human Body) - 4 kV C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55 150  
Tj max. Max. junction temperature -40 150  
Tlead Lead temperature (soldering, 10 seconds) - 300  

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.


Description

The IPS021 are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability of the IPS021 is significantly enhanced by the active clamp and covers most inductive load demagnetizations.




Parameters:

Technical/Catalog InformationIPS021
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
Package / CaseTO-220
Mounting TypeThrough Hole
TypeLow Side
Voltage - Supply4 V ~ 6 V
On-State Resistance130 mOhm
Current - Output / Channel1.8A
Current - Peak Output10A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPS021
IPS021



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