Position: Home  > All Categories> Integrated Circuits (ICs) > IPP90R800C3

IPP90R800C3

MOSFET N-CH 900V 6.9A TO-220

product image

IPP90R800C3 Picture
See larger image
SeekIC No. : 003431800 Detail

IPP90R800C3: MOSFET N-CH 900V 6.9A TO-220

IPP90R800C3 Data Sheet

floor Price/Ceiling Price

US $ .78~.78 / Piece | Get Latest Price
Part Number:
IPP90R800C3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10000
  • Unit Price
  • $.78
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: CoolMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 900V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 6.9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 460µA Gate Charge (Qg) @ Vgs: 42nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1100pF @ 100V
Power - Max: 104W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 104W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25° C: 6.9A
Series: CoolMOS™
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO220-3
Input Capacitance (Ciss) @ Vds: 1100pF @ 100V
Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 460µA


Parameters:

Technical/Catalog InformationIPP90R800C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C6.9A
Rds On (Max) @ Id, Vgs800 mOhm @ 4.1A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 100V
Power - Max104W
PackagingTube
Gate Charge (Qg) @ Vgs42nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP90R800C3
IPP90R800C3



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Cables, Wires
821-0814-a
415-0100-150
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Memory Cards, Modules
WT32
VTL5C7
View more