IPP90R1K2C3

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 5.1A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 83W
Drain to Source Voltage (Vdss): 900V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO220-3
Input Capacitance (Ciss) @ Vds: 710pF @ 100V
Vgs(th) (Max) @ Id: 3.5V @ 310µA


Parameters:

Technical/Catalog Information	IPP90R1K2C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	5.1A
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	710pF @ 100V
Power - Max	83W
Packaging	Tube
Gate Charge (Qg) @ Vgs	28nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPP90R1K2C3 IPP90R1K2C3