MOSFET COOL MOS
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5.7 A |
Resistance Drain-Source RDS (on) : | 1000 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220 |
Packaging : | Tube |
Technical/Catalog Information | IPP90R1K0C3 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 5.7A |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 3.3A, 10V |
Input Capacitance (Ciss) @ Vds | 850pF @ 100V |
Power - Max | 89W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 34nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPP90R1K0C3 IPP90R1K0C3 |