IPP90R1K0C3, US $ .85-1.52 , Infineon Technologies, IPP90R1K0C3 DataSheet download, circuit diagram from SeekIC.com

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IPP90R1K0C3: MOSFET COOL MOS

IPP90R1K0C3 Data Sheet

US $ .85~1.52 / Piece | Get Latest Price

Part Number:: IPP90R1K0C3
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$1.52
$1.37
$1.09
$.85

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	900 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	5.7 A
Resistance Drain-Source RDS (on) :	1000 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Package / Case :	TO-220
Packaging :	Tube

Description

Mounting Style :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 5.7 A
Resistance Drain-Source RDS (on) : 1000 mOhms

Parameters:

Technical/Catalog Information	IPP90R1K0C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	5.7A
Rds On (Max) @ Id, Vgs	1 Ohm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds	850pF @ 100V
Power - Max	89W
Packaging	Tube
Gate Charge (Qg) @ Vgs	34nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPP90R1K0C3 IPP90R1K0C3

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IPP90R1K0C3

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