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IPP80N06S2L-11

MOSFET OptiMOS PWR TRANST 55V 80A

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SeekIC No. : 00153349 Detail

IPP80N06S2L-11: MOSFET OptiMOS PWR TRANST 55V 80A

IPP80N06S2L-11 Data Sheet

floor Price/Ceiling Price

US $ .57~.92 / Piece | Get Latest Price
Part Number:
IPP80N06S2L-11
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.92
  • $.82
  • $.65
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 11 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 11 m Ohms


Parameters:

Technical/Catalog InformationIPP80N06S2L-11
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs11 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 2075pF @ 25V
Power - Max158W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseTO-220-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP80N06S2L 11
IPP80N06S2L11



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