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IPP80N06S2L-05

MOSFET OptiMOS PWR TRANS 55V 80A

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SeekIC No. : 00153066 Detail

IPP80N06S2L-05: MOSFET OptiMOS PWR TRANS 55V 80A

IPP80N06S2L-05 Data Sheet

floor Price/Ceiling Price

US $ 1.01~1.76 / Piece | Get Latest Price
Part Number:
IPP80N06S2L-05
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.76
  • $1.51
  • $1.13
  • $1.01
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 4.8 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 4.8 m Ohms


Parameters:

Technical/Catalog InformationIPP80N06S2L-05
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5700pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs230nC @ 10V
Package / CaseTO-220-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP80N06S2L 05
IPP80N06S2L05



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