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IPP80N04S3-06

MOSFET OPTIMOS -T PWR-TRANS 40V 80A

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SeekIC No. : 00151358 Detail

IPP80N04S3-06: MOSFET OPTIMOS -T PWR-TRANS 40V 80A

IPP80N04S3-06 Data Sheet

floor Price/Ceiling Price

US $ .49~.79 / Piece | Get Latest Price
Part Number:
IPP80N04S3-06
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.79
  • $.71
  • $.56
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0057 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0057 Ohms


Parameters:

Technical/Catalog InformationIPP80N04S3-06
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 3250pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseTO-220-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP80N04S3 06
IPP80N04S306



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