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IPP80N04S3-03

MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 80A 3.2

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SeekIC No. : 00151357 Detail

IPP80N04S3-03: MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 80A 3.2

IPP80N04S3-03 Data Sheet

floor Price/Ceiling Price

US $ .66~1.16 / Piece | Get Latest Price
Part Number:
IPP80N04S3-03
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.16
  • $1
  • $.74
  • $.66
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 3.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 3.5 m Ohms


Parameters:

Technical/Catalog InformationIPP80N04S3-03
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.5 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 7300pF @ 25V
Power - Max188W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-220-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP80N04S3 03
IPP80N04S303



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