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IPP80N04S2-04

MOSFET OptiMOS PWR TRANST 40V 80A

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IPP80N04S2-04: MOSFET OptiMOS PWR TRANST 40V 80A

IPP80N04S2-04 Data Sheet

floor Price/Ceiling Price

US $ .92~1.35 / Piece | Get Latest Price
Part Number:
IPP80N04S2-04
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~245
  • 245~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.35
  • $1.22
  • $1.09
  • $.92
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 3.7 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 3.7 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175 operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25,VGS=10 V
80
A
80
A
Pulsed drain current
ID,pulse
TC=25
320
A
Avalanche energy, single pulse2
EAS
ID=80A
660
mJ
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25
300
W
Operating and storage temperature
Tj,Tstg
-55 .. +175
IEC climatic category; DIN IEC 68-1
55/175/56



Parameters:

Technical/Catalog InformationIPP80N04S2-04
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs3.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5300pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-220-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP80N04S2 04
IPP80N04S204



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