MOSFET OptiMOS PWR TRANST 40V 80A
IPP80N04S2-04: MOSFET OptiMOS PWR TRANST 40V 80A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 3.7 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
ID |
TC=25,VGS=10 V |
80 |
A |
80 |
A | |||
Pulsed drain current |
ID,pulse |
TC=25 |
320 |
A |
Avalanche energy, single pulse2 |
EAS |
ID=80A |
660 |
mJ |
Gate source voltage |
VGS |
±20 |
V | |
Power dissipation |
Ptot |
TC=25 |
300 |
W |
Operating and storage temperature |
Tj,Tstg |
-55 .. +175 |
||
IEC climatic category; DIN IEC 68-1 |
55/175/56 |
Technical/Catalog Information | IPP80N04S2-04 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 5300pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 170nC @ 10V |
Package / Case | TO-220-3 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPP80N04S2 04 IPP80N04S204 |