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IPP77N06S3-09

MOSFET N-CH 55V 77A

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SeekIC No. : 00151813 Detail

IPP77N06S3-09: MOSFET N-CH 55V 77A

IPP77N06S3-09 Data Sheet

floor Price/Ceiling Price

US $ .57~.88 / Piece | Get Latest Price
Part Number:
IPP77N06S3-09
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.88
  • $.79
  • $.59
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 77 A
Resistance Drain-Source RDS (on) : 9.1 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 77 A
Resistance Drain-Source RDS (on) : 9.1 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• Avalanche tested
• ESD Class 2 (HBM) EIA/JESD22-A114-B


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C, VGS=10 V 77 A
TC=100 °C,VGS=10 V 55  
Pulsed drain current ID,pulse TC=25 °C 308  
Avalanche energy, single pulse EAS ID=38 A 170 mJ
Drain gate voltage VDG   55
Gate source voltage VGS   ±20 V
Power dissipation Ptot TC=25 °C 107 W
Operating and storage temperature Tj, Tstg   -55 ... +175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPP77N06S3-09
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C77A
Rds On (Max) @ Id, Vgs9.1 mOhm @ 39A, 10V
Input Capacitance (Ciss) @ Vds 5335pF @ 25V
Power - Max107W
PackagingTube
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPP77N06S3 09
IPP77N06S309
IPP77N06S3 09IN ND
IPP77N06S309INND
IPP77N06S3-09IN



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