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IPP26CNE8NG

Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...

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IPP26CNE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...

IPP26CNE8NG Data Sheet

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Part Number:
IPP26CNE8NG
Supply Ability:
5000

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Product Details

Description



Features:

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current I D T C=25 35 A
T C=100 25
Pulsed drain current2) I D,pulse T C=25 140
Avalanche energy, single pulse EAS I D=35 A, RGS=25 65 mJ
Reverse diode dv /dt dv /dt I D=35 A, VDS=68 V,
di /dt =100 A/s,
Tj,max=175		 6 kV/s
Gate source voltage3) VGS   ±20 V
Power dissipation Ptot T C=25 71 W
Operating and storage temperature Tj, Tstg   -55 ... 175
IEC climatic category; DIN IEC 68-1     55/175/56  

1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V


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