Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...
IPP26CNE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...
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Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | I D | T C=25 | 35 | A |
T C=100 | 25 | |||
Pulsed drain current2) | I D,pulse | T C=25 | 140 | |
Avalanche energy, single pulse | EAS | I D=35 A, RGS=25 | 65 | mJ |
Reverse diode dv /dt | dv /dt | I D=35 A, VDS=68 V, di /dt =100 A/s, Tj,max=175 |
6 | kV/s |
Gate source voltage3) | VGS | ±20 | V | |
Power dissipation | Ptot | T C=25 | 71 | W |
Operating and storage temperature | Tj, Tstg | -55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |