IPP075N15N3 G

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0075 Ohms


Pinout




Description

The IPP075N15N3 G is designed as one kind of power-transistor device that has some points of features:(1)N-channel, normal level; (2)Excellent gate charge x R DS(on) product (FOM); (3)Very low on-resistance R DS(on); (4)175 operating temperature; (5)Pb-free lead plating; RoHS compliant; (6)Qualified according to JEDEC for target application; (7)Ideal for high-frequency switching and synchronous rectification; (8)Halogen-free according to IEC61249-2-21.

The absolute maximum ratings of the IPP075N15N3 G can be summarized as:(1)Continuous drain current Tc=25 °C: 100 A;(2)Continuous drain current Tc=100 °C: 93 A;(3)Pulsed drain current: 400 A;(4)Avalanche energy, single pulse: 780 mJ;(5)Reverse diode dv /dt: 6 kV/s;(6)Gate source voltage: ±20 V;(7)Power dissipation: 300 W;(8)Operating and storage temperature: -55 to 175 °C;(9)IEC climatic category; DIN IEC 68-1: 55/175/56. If you want to know more information about the IPP075N15N3 G, please download the datasheet in www.seekic.com or www.chinaicmart.com .