IPI90R1K0C3

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 34nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 5.7A
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss): 900V
Power - Max: 89W
Series: CoolMOS™
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Input Capacitance (Ciss) @ Vds: 850pF @ 100V


Parameters:

Technical/Catalog Information	IPI90R1K0C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	5.7A
Rds On (Max) @ Id, Vgs	1 Ohm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds	850pF @ 100V
Power - Max	89W
Packaging	Tube
Gate Charge (Qg) @ Vgs	34nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPI90R1K0C3 IPI90R1K0C3