MOSFET N-CH 55V 77A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 77 A | ||
Resistance Drain-Source RDS (on) : | 9.1 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | TC=25 °C, VGS=10 V | 77 | A |
TC=100 °C,VGS=10 V | 55 | |||
Pulsed drain current | ID,pulse | TC=25 °C | 308 | |
Avalanche energy, single pulse | EAS | ID=38 A | 170 | mJ |
Drain gate voltage | VDG | 55 | ||
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25 °C | 107 | W |
Operating and storage temperature | Tj, Tstg | -55 ... +175 | °C | |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Technical/Catalog Information | IPI77N06S3-09 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 77A |
Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 39A, 10V |
Input Capacitance (Ciss) @ Vds | 5335pF @ 25V |
Power - Max | 107W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 103nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPI77N06S3 09 IPI77N06S309 IPI77N06S3 09IN ND IPI77N06S309INND IPI77N06S3-09IN |