IPI60R520CP

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) @ Vgs: 31nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 6.8A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 66W
Series: CoolMOS™
Manufacturer: Infineon Technologies
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds: 630pF @ 100V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO262-3


Parameters:

Technical/Catalog Information	IPI60R520CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	6.8A
Rds On (Max) @ Id, Vgs	520 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 100V
Power - Max	66W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPI60R520CP IPI60R520CP