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IPI60R520CP

MOSFET N-CH 600V 6.8A TO-262

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SeekIC No. : 003431844 Detail

IPI60R520CP: MOSFET N-CH 600V 6.8A TO-262

IPI60R520CP Data Sheet

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US $ .57~.57 / Piece | Get Latest Price
Part Number:
IPI60R520CP
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10000
  • Unit Price
  • $.57
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: CoolMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 6.8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) @ Vgs: 31nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 630pF @ 100V
Power - Max: 66W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) @ Vgs: 31nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 6.8A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 66W
Series: CoolMOS™
Manufacturer: Infineon Technologies
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds: 630pF @ 100V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO262-3


Parameters:

Technical/Catalog InformationIPI60R520CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C6.8A
Rds On (Max) @ Id, Vgs520 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds 630pF @ 100V
Power - Max66W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI60R520CP
IPI60R520CP



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