IPI60R299CP

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 96W
Gate Charge (Qg) @ Vgs: 29nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Series: CoolMOS™
Manufacturer: Infineon Technologies
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds: 1100pF @ 100V
Supplier Device Package: PG-TO262-3


Parameters:

Technical/Catalog Information	IPI60R299CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	299 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 100V
Power - Max	96W
Packaging	Tube
Gate Charge (Qg) @ Vgs	29nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPI60R299CP IPI60R299CP