IPI45N06S3L-13

MOSFET N-CH 55V 45A

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SeekIC No. : 00163671 Detail

IPI45N06S3L-13: MOSFET N-CH 55V 45A

floor Price/Ceiling Price

Part Number:
IPI45N06S3L-13
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 13.4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-262
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 13.4 m Ohms


Parameters:

Technical/Catalog InformationIPI45N06S3L-13
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C45A
Rds On (Max) @ Id, Vgs13.4 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max65W
PackagingTube
Gate Charge (Qg) @ Vgs75nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI45N06S3L 13
IPI45N06S3L13
IPI45N06S3L 13IN ND
IPI45N06S3L13INND
IPI45N06S3L-13IN



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