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IPI25N06S3L-22

MOSFET OptiMOS-T PWR TRANS 55V 25A

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SeekIC No. : 00151743 Detail

IPI25N06S3L-22: MOSFET OptiMOS-T PWR TRANS 55V 25A

IPI25N06S3L-22 Data Sheet

floor Price/Ceiling Price

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Part Number:
IPI25N06S3L-22
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 10~100
  • 100~500
  • Unit Price
  • $.49
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  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 21.6 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 25 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 21.6 m Ohms


Features:

• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 1C (HBM) EIA/JESD22-A114-B


Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
I D
T C=25 , VGS=10 V
25
A
T C=100 ,
VGS=10 V2)
25
Pulsed drain current2)
I D,pulse
T C=25
100
Avalanche energy, single pulse3)
EAS
I D=12A
60
mJ

Drain gate voltage2)

VDG

55

V

Gate source voltage4)
VGS
±16
V
Power dissipation
Ptot
T C=25
50
W
Operating and storage temperature
T j, T stg
-55 ... +175

IEC climatic category; DIN IEC 68-1

55/175/56



Parameters:

Technical/Catalog InformationIPI25N06S3L-22
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs21.6 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds 2260pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI25N06S3L 22
IPI25N06S3L22



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