IPI14N03LA

MOSFET N-CH 25V 30A I2PAK

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IPI14N03LA: MOSFET N-CH 25V 30A I2PAK

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Part Number:
IPI14N03LA
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) @ Vgs: 8.3nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1043pF @ 15V
Power - Max: 46W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: 8.3nC @ 5V
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 46W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO262-3
Input Capacitance (Ciss) @ Vds: 1043pF @ 15V
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 30A, 10V


Features:

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated



Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 30 A
TC=100 °C 30 A
Pulsed drain current ID,pulse TC=25 °C 210 A
Avalanche energy, single pulse EAS ID=77 A, RGS=25 Ω 60 mJ
Reverse diode dv /dt dv /dt ID=80 A, VDS=20 V,
di /dt =200 A/µs,
Tj,max=175 °C
6 kV/µs
Gate source voltage VGS   ±20 V
Power dissipation Ptot TC=25 °C 46 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationIPI14N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs13.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1043pF @ 15V
Power - Max46W
PackagingTube
Gate Charge (Qg) @ Vgs8.3nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI14N03LA
IPI14N03LA



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