Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; RoHS compliant• Qualified according to JEDEC1) for target application• Ideal for high-freq...
IPI12CNE8NG: Features: • N-channel, normal level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• 175 operating temperature• Pb-free lead plating; Ro...
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• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
ID |
T C=25 |
67 |
A |
T C=100 |
48 | |||
Pulsed drain current2) |
ID,pulse |
T C=25 |
268 | |
Avalanche energy, single pulse |
EAS |
I D=67A, RGS=25 |
154 |
mJ |
Reverse diode dv /dt |
dv/dt |
ID=67A, VDS=68V, |
6 |
kV/µs |
Gate source voltage3) |
VGS |
|
±20 |
V |
Power dissipation |
Ptot |
T C=25 |
125 |
W |
Operating and storage temperature |
Tj, Tstg |
|
-55...175 |
|
IEC climatic category; DIN IEC 68-1 |
|
|
55/175/56 |
|
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V