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IPI120N04S3-02

MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A 2 mOhm

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SeekIC No. : 00154583 Detail

IPI120N04S3-02: MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A 2 mOhm

IPI120N04S3-02 Data Sheet

floor Price/Ceiling Price

US $ 1.13~1.97 / Piece | Get Latest Price
Part Number:
IPI120N04S3-02
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.97
  • $1.69
  • $1.27
  • $1.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 2.3 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 2.3 m Ohms


Parameters:

Technical/Catalog InformationIPI120N04S3-02
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs2.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 14300pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs210nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI120N04S3 02
IPI120N04S302



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