IPI120N04S3-02, US $ 1.13-1.97 , Infineon Technologies, IPI120N04S3-02 DataSheet download, circuit diagram from SeekIC.com

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IPI120N04S3-02: MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A 2 mOhm

IPI120N04S3-02 Data Sheet

US $ 1.13~1.97 / Piece | Get Latest Price

Part Number:: IPI120N04S3-02
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$1.97
$1.69
$1.27
$1.13

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Upload time: 2024/12/21

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Recent History
What is this?

IPI100N04S3-03 evaluate
US $.85 - 1.49 / Piece

MOSFET OPTIMOS -T PWR-TRANS 40V 100A 2.5mOhms
IPI100N04S3-03M evaluate
US $.95 - 1.49 / Piece

MOSFET N-Channel 40V MOSFET
IPI100N04S4-H2 evaluate
US $.56 - 1.12 / Piece

MOSFET N-Channel 40V MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	40 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	120 A
Resistance Drain-Source RDS (on) :	2.3 m Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-262	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 2.3 m Ohms

Parameters:

Technical/Catalog Information	IPI120N04S3-02
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	2.3 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	14300pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	210nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPI120N04S3 02 IPI120N04S302

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IPI120N04S3-02

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