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IPI11N03LA

MOSFET N-KANAL POWER MOS

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SeekIC No. : 00163314 Detail

IPI11N03LA: MOSFET N-KANAL POWER MOS

IPI11N03LA Data Sheet

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Part Number:
IPI11N03LA
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 18.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 30 A
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 18.5 m Ohms


Parameters:

Technical/Catalog InformationIPI11N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs11.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1358pF @ 15V
Power - Max52W
PackagingTube
Gate Charge (Qg) @ Vgs11nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI11N03LA
IPI11N03LA



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